TPD3215M
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TPD3215M
Product_Category
FET, MOSFET Arrays
Manufacturer
Transphorm
Type
GANFET 2N-CH 60
Encapsulation
Packages
Bulk
RoHS
NO
Price
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Specifications
PDF(1)
PDF(2)
TYPEDESCRIPTION
MfrTransphorm
Series-
PackageBulk
Product StatusOBSOLETE
Package / CaseModule
Mounting TypeThrough Hole
Configuration2 N-Channel (Half Bridge)
Operating Temperature-40°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
Power - Max470W
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Input Capacitance (Ciss) (Max) @ Vds2260pF @ 100V
Rds On (Max) @ Id, Vgs34mOhm @ 30A, 8V
Gate Charge (Qg) (Max) @ Vgs28nC @ 8V
Supplier Device PackageModule
00852-3460 5868
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