TP65H050G4YS Single FETs, MOSFETs_HK Quantum International_integrated circuit ic_relay_electronic components _connector_transformer_discrete semiconductor_PCBA_development board_core board

TP65H050G4YS

Product classification

Single FETs, MOSFETs

Manufacturer

Transphorm

Type

650 V 35 A GAN

Encapsulation

Package

Tube

RoHS

YES

Price

$9.9100

Available options

Quantity

Stock : 0

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Specifications

PDF(1)

TYPE	DESCRIPTION
Mfr	Transphorm
Series	SuperGaN®
Package	Tube
Product Status	ACTIVE
Package / Case	TO-247-4
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	GaNFET (Gallium Nitride)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Rds On (Max) @ Id, Vgs	60mOhm @ 22A, 10V
Power Dissipation (Max)	132W (Tc)
Vgs(th) (Max) @ Id	4.8V @ 700µA
Supplier Device Package	TO-247-4L
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	650 V
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1000 pF @ 400 V