Mfr | Inventchip Technology |
Series | - |
Package | Tube |
Product Status | ACTIVE |
Package / Case | TO-247-3 |
Mounting Type | Through Hole |
Operating Temperature | -55°C ~ 175°C (TJ) |
Technology | SiCFET (Silicon Carbide) |
FET Type | N-Channel |
Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
Rds On (Max) @ Id, Vgs | 65mOhm @ 20A, 20V |
Power Dissipation (Max) | 327W (Tc) |
Vgs(th) (Max) @ Id | 3.2V @ 6mA |
Supplier Device Package | TO-247-3 |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
Vgs (Max) | +20V, -5V |
Drain to Source Voltage (Vdss) | 1200 V |
Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 20 V |
Input Capacitance (Ciss) (Max) @ Vds | 2770 pF @ 800 V |